具有最佳功率输出特性的耿氏振荡器设计  

A Design of Gunn Diode Oscillator with Optimum Power Output Characteristics

作　　者：邬友卫 余世里[1] 牟善祥[1] 

机构地区：[1]南京理工大学电子工程与光电技术学院

出　　处：《南京理工大学学报》1995年第3期267-271,共5页Journal of Nanjing University of Science and Technology

摘　　要：振荡器的振荡频率和输出功率是所用器件的等效电路参量的函数。通过对实验振荡器的频率和功率的测量，并应用最小二乘法作曲线拟合，即可提取器件的等效电路参量，从而为设计具有最佳功率输出特性的耿氏振荡器奠定了基础。该设计应用了包含非线性电导的等效电路，因此所设计的振荡器能在给定频率下输出最大功率。一个试验ＭＩＣＧｕｎｎ介质腔振荡器（ＤＲＯ）在Ｘ波段输出功率大于１００ｍＷ，频率稳定度达２．２ｘ１０－６／℃。The oscillating frequency and power output are function of the oscillator's equivalent circuit parameters.By measuring oscillating frequency and power and doing curvefitting with least squares approximation,the device equivalent parameters are obtainedwhich serves as the fundation for designing Gunn diode oscillator with best power outputcharacteristics,In this design,the equivalent circuit of a Gunn diode has been applied,inwhich a nonlinear conductance is included,hence the designing oscillator can give maximum output power at any given frequency. A test-MIC Gunn DRO is obtained in X-Band。Its output power is more than 100 mW and frequency stability is 2.2 x 10-6/℃.

关 键 词：耿氏振荡器 微波振荡器 输出功率 振荡频率 

分 类 号：TN752.2[电子电信—电路与系统]