基态类Ne锗离子双电子复合的半相对论计算  

Semi-Relativistic Calcualations of Dielectronic Recombination for Ground -State Me-like Ge

作　　者：赵力波[1] 韩国兴[1] 李世昌[1] 

机构地区：[1]中国科学院物理研究所,北京应用物理与计算数学研究所

出　　处：《强激光与粒子束》1995年第3期373-380,共8页High Power Laser and Particle Beams

摘　　要：采用半相对论多组态Ｈａｒｔｒｅｅ一Ｆｏｃｋ模型，计算了类Ｎｅ锗离子经过３ｌ３ｌ＇和４ｌ４ｌ＇双激发态到类Ｎａ离子单激发态的态对态双电子复合速率系数，同时给出了描写上述复合过程的参数Ｂ和。通过对求和而获得的部分双电子复合速率系数与其它理论计算结果进行了比较。Level一to一level dielectronic recombination(DR)rate coefficients for the Ge￣22+ ion have been evaluated from the Ne一like ground state into the Na一like non一autoionizing states via the 3l 3l'and 4l4l' manifolds.The fitted parameters describing this DR process are presented.The partial DR rate coefficients,obtained by summing level一to一level DR rate coeffcients over the singly excited states of the Ge￣20+ ion,are compared with available data. Our calculations are perfonfned within the framework of the semi一relativistic multiconfigruation Hartree一Fock model.in which the relativistic mass一velocitv and Darwin corrections are made to both the radial wavefunctions and the singly and doubly excited state energles.

关 键 词：双电子复合 半相对论 氦 锗离子 

分 类 号：O614.431[理学—无机化学] O562.4[理学—化学]