用气相传输法生长C_（60）单晶  

Vapor Transport Growth of C_(60)Single Crystals

作　　者：张继红[1] 张宏广[1] 朱艳秋[1] 魏秉庆[1] 梁吉[1] 高志栋[1] 吴德海[1] 惠梦君[1] 

机构地区：[1]清华大学,中国科学院物理研究所

出　　处：《人工晶体学报》1995年第1期5-9,共5页Journal of Synthetic Crystals

摘　　要：本文采用气相传输方法，以氦气作为传输载体，生长了线度为毫米量级的Ｃ＿（６０）单晶体。Ｘ射线衍射分析结果证明，该单晶为ｆｃｃ结构，晶格常数为１．４１４９ｎｍ。分析表明，Ｃ＿（６０）晶体的形核方式与金属形核类似，其生长方式为台阶式生长。A vapor transport technique with a flowing helium gas carrier has been used to produce high quality C_(60) single crystals with size of millimeters,X-ray diffraction result indicated that the crystal is the face-centered cubic(fcc)structure with lattice parameter of 1.4149nm. The nucleation of C_(60) crystals is similar to that of metals and it is considered to be as step growth.

关 键 词：晶体生长 单晶 气相传输 碳60 

分 类 号：O782.7[理学—晶体学] O743.1