红外晶体AgGaSe_2的生长和品质  

Growth and Characterization of AgGaSe_2 Crystals for Infrared Applications

作　　者：程干超[1] 杨琳[1] 吴海信 程宁 

机构地区：[1]中国科学院安微光学精密机械研究所

出　　处：《人工晶体学报》1995年第3期193-197,共5页Journal of Synthetic Crystals

基　　金：国家科委863高科技资助

摘　　要：采用一种改进的布里奇曼方法生长出光学质量的ＡｇＧａＳｅ＿２单晶体。晶棒尺寸通常为Φ２５ｘ８０ｍｍ。生长的晶体在添加有Ａｇ＿２Ｓｅ粉末中高温退火处理，使晶体的光透过率显著地改善。用红外光源丝网成象法，红外显微照相，常规分光光度计，付里叶变换红外光谱仪和Ｘ射线衍射对退火前后的晶体质量进行了检测。用一台ＴＥＡＣＯ＿２激光，脉冲泵浦一片１２ｍｍ长Ⅰ型匹配的倍频晶体样品，实现了１０．６μｍ波长向５．３μｍ波长的倍频。Optical quality AgGaSe_2 single crystals were grown by a modified Bredgman technique. Boule sizes are typically 25mm diameter by 80mm long.The optical transparency of as-grown crystals have been substantially improved by annealing in the presence of Ag_2Se. As - grown and annealed crystal samples were characterized by using IR wire mesh imaging,photomicrography,conventional speetrophotometer, fouriertransform IR spectroscopy,and X- ray. A sample 12mm long was prepared for type I phase-matching second harmonic generation. By pumping the sample with pulses from a TEA CO_2 laser,doubling from 10.6μm to 5.3μm has been demonstrated.

关 键 词：硒化银镓 非线性光学 晶体 红外晶体 晶体生长 

分 类 号：O734[理学—晶体学] TN213.04[电子电信—物理电子学]