Cr：LiCaAlF_6晶体的缺陷研究  

Investigation of Defects in Cr:LiCaAlF_6 Crystal

作　　者：张吉果[1] 王英才[1] 方珍意[1] 黄朝恩[1] 程立森[1] 

机构地区：[1]山东大学晶体材料研究所,北京人工晶体研究所

出　　处：《人工晶体学报》1995年第3期222-226,共5页Journal of Synthetic Crystals

摘　　要：本文报道了用化学腐蚀、光学显微镜、扫描电子显微镜、Ｘ射线能谱分析等方法观测布里奇曼法生长的Ｃｒ：ＬｉＣａＡｌＦ＿６（简称Ｃｒ：ＬｉＣＡＦ）晶体中的缺陷。分析讨论了晶体中缺陷的形成原因和减少缺陷的措施。The defects in Cr:LiCaAlF_6 crystal grown by Bridgman method were investigated by means of chemical etching,optical microscopy,scanning electron microscopy and X-ray energy distribution analysis,respectively,The formation of the defects and the measure of reducing defects in crystal are discussed.

关 键 词：激光晶体 晶体 缺陷 位错 掺铬氟化钙锂 

分 类 号：TN244.06[电子电信—物理电子学]