SnO_2／p接触特性对a－Si太阳电池填充因子的影响  

THE INFLUENCE OF THE CONTACT CHARACTERISTIC OF SnO_2/P ON THE FILL FACTOR OF SOLAR CELLS

作　　者：耿新华[1] 刘世国[1] 李洪波[1] 孙云[1] 孙钟林[1] 徐温元[1] 

机构地区：[1]南开大学光电子研究所

出　　处：《太阳能学报》1995年第3期263-267,共5页Acta Energiae Solaris Sinica

摘　　要：用ＰＥＣＶＤ方法制备出高电导率（～０．２ｓｃｍ－１）、宽带隙（～２．２ｅＶ）的Ｐ型微晶化硅碳合金（ｐ－μｃ－ＳｉＣ：Ｈ）薄膜材料。利用ｐ－μＣ－ＳｉＣ：Ｈ／ｐ－ａ－Ｓｉ：Ｈ复合结构做ａ－Ｓｉ太阳电池的窗口材料，明显改善了ＳｎＯ２／ｐ之间的接触特性，从而使１０ｃｍ×１０ｃｍ单结集成型电池的填充因子从０．７０以下提高到０．７２。High conductivity (～0.2scm-1) and wide band gap (～2.2eV) p-type microcrystalized silicon-carbide alloy (p-μ c-SiC:H) thin films were fabricated by PECVD method. The p-μc-SiC:H/p-a-SiC: H structure as window layer of solar cells improved obviously the contact characteristics of SnO2/P. Purthermore. the fill factor of single junction integrated solar cells with area of 10cm×10cm increased from below 0.70to 0.72.

关 键 词：SnO2/P 接触特性 填充因子 硅太阳电池 薄膜 

分 类 号：TM914.41[电气工程—电力电子与电力传动]