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机构地区:[1]武汉邮电科学研究院
出 处:《通信学报》1995年第6期113-119,共7页Journal on Communications
摘 要:本文对如何提高国产1.55μmInGraAspDFB-LD组件直接高速调制速率以及国产PIN-FET组件的频响带宽进行了理论与实验研究。在实验测量的基础上建立了国产LD组件小信号等效电路模型,对其调制响应速率的主要限制因素进行了分析,研制了高速DFB-LD组件,将其调制速率提高到3.2GHz。同时,在对谐振式PIN-FET光接收机进行噪声分析的基础上,采用微波混合集成工艺研制了一个串联谐振式PIN-FET光接收组件,有效地提高了PIN-FET的频响带宽。This paper represents the way of how to improve the modulation speed of 1.55μm InGaAsp DFB-LD module and the frequency response bandwidth of PIN-FET module(all made in China) theoritically and experimentally.A small signal equivalent circuit model of LD module was established and the main restrictions of the modulation speed of LD were analyzed based on the experimental data.As a result,a high-speed DFB-LD module with modulation speed at 3.ZGHz was developed.On the other hand,based on the analytical results of the resonant PINFET optical receiver,a series resonant PIN-FET optical receiver was developed using microwave hybrid integrated technology which has a good improvement on frequeney response bandwidth.
分 类 号:TN248[电子电信—物理电子学] TN929.11
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