小型L波段GaAs双栅场效应管混频器的设计和性能  

Design and Performance of a Compact L-Band Dual-Gate GaAs MESFET Mixer

作　　者：王文骐[1] 杨新民[2] 

机构地区：[1]上海大学,上海200072 [2]中科院上海冶金研究所

出　　处：《微波学报》1995年第2期112-116,共5页Journal of Microwaves

摘　　要：本文叙述了用于L波段微波接收机的砷化镓双栅场效应管混频器的设计考虑和实验结果.包括中频匹配网络,整个电路制作在30×40mm^2复合微波介质基片上.获得8.1dB的变频增益和5.9dB的噪声系数.研究了本振功率P_(Lo)、信号功率P_s和直流偏压V_(g1s)、V_(g2s)对变频增益G_c和噪声系数N_F的影响,并给示了最佳条件.The design considerations and experimental results of a miniaturized 1237MHz dual-gate GaAs MESFET mixer for L-band receiver module are described in this paper. A size of 30 ×40mm. including IF matching network, is achieved with 8.1dB conversion gain and 5. 9dB noise figure. The dependence of the conversion gain GC and the noise figure NF on the local oscillator power P- . signal power Ps and DC bias voltage Vgls,Vg2s are also studied and opt mized condition is given.

关 键 词：双栅场效应管 混频器 砷化镓 设计 性能 

分 类 号：TN773[电子电信—电路与系统]