化学沉积法多晶硫化锌薄膜研究  

Chemical Bath Deposition of Polycrystalline Thin Film Cadmium Sulfide

作　　者：王初华[1] 李翔[1] 胡黎明[1] 

机构地区：[1]华东理工大学技物所

出　　处：《无机材料学报》1995年第2期236-240,共5页Journal of Inorganic Materials

基　　金：国家自然科学基金

摘　　要：本文报道在一定浓度范围的ＮＨ３－ＮＨ４ＡＣ－ＣｄＡＣ２－（ＮＨ２）２ＣＳ水溶液体系中５０～１００ｎｍ厚的器件质量硫化镉多晶薄膜的生长条件研究．透明高密度的ＣｄＳ薄膜沉积的最佳条件已经获得．ＳＥＭ分析表明硫化镉膜晶粒大小为５０～１００ｎｍ二在玻璃上和ＳｎＯ２：Ｆ／玻璃上的ＣｄＳ膜具有强的定向选择晶面．８０ｕｍ厚的硫化镉膜暗电阻率是１０３～１０４Ω·ｃｍ数量级，光电导比是１００～２００范围，光禁带宽度是２．４４ｅＶ．同时对水溶液中硫化镉成膜条件作了研究．The deposition of device-quality CdS films with thickness of 50￣100nm on glass and SnO2:F/glass substrates was carried out in aqueous solution under a certaill range of concentration of ammonia, ammonium acetate, cadmium acetate and thiourea at 90℃. SEM Analysis shows CdS film grain size of 50￣100um. From XRD analysis, the films show a single diffraction peak at 2θ= 26.6 ￣ 26.7°, indicating a strong preferred orientation. The optical bandgap energy is about 2.44eV. The dark resistivity of asdeposited CdS films of 80nm thickness is in the order of 1000￣10000Ω·cm and the ratio of dark resistivity to illuminated resistivity is in the range of 100￣200.

关 键 词：硫化镉 薄膜 化学沉积法 半导体 

分 类 号：TN304.22[电子电信—物理电子学]