激光合成Al_2O_3－WO_3陶瓷的电子显微分析  

Electron Microstructure Analyses of Al_2O_3-WO_3 Ceramics Synthesized by a High Power CO_2 Laser

作　　者：郑芳[1] 袁润章[1] 李兴教[1] 李再光[1] 

机构地区：[1]武汉工业大学新材料研究所,华中理工大学激光技术实验室

出　　处：《无机材料学报》1995年第4期445-451,共7页Journal of Inorganic Materials

基　　金：国家自然科学基金;国家激光技术实验室基金

摘　　要：本文利用透射电镜（ＴＥＭ）及能量色散Ｘ射线衍射分析（ＥＤＡＸ）技术对激光合成的Ａｌ２Ｏ３－ＷＯ３陶瓷材料进行分析．ＴＥＭ分析表明，在Ａｌ２Ｏ３－ＷＯ３材料的胞状结构中，Ａｌ２Ｏ３形成柱状单晶且Ｃｏ轴平行生长轴，Ａｌ２（ＷＯ４）３及ＡｌｘＷＯ３位于Ａｌ２Ｏ３柱状晶间界；非平衡相ＡｌｘＷＯ３中存在畴及超晶格结构，Ａｌ３＋对ＷＯ３母体网格Ａ位占位是有序的．ＥＤＡＸ结果则指出合成材料Ａｌ２Ｏ３晶粒中Ｗ杂质的浓度随配料ＷＯ３含量的增加而增大；样品合成过程中激光功率从最高值连续降低至０瓦可减少Ａｌ２Ｏ３晶粒Ｗ的掺入量；高温下对合成样品长时间热处理可使Ｗ杂质从Ａｌ２Ｏ３中释放出．材料电性质测试结果表明，材料电阻率与其中Ａｌ２Ｏ３晶粒Ｗ含量紧密相关，Ｗ的含量越高，材料电导率越大．TEM and EDX analyses were performed to the Al2O3-WO3 ceramics Synthesized by a high power CO2 laser. TEM results show that Al2O3 formed the column single crystals growing at Co axis in the cell structure of the samples and Al2(WO4)3 and Alx WO3were distributed at boundaries between them;A superlattice and a domain structure were observed in the nonequilibrium phase AlxWO3 and thus indicating the Ording of Al ion in the A-position of WO3 matrix . By means of EDAX it was found that the content of tungsten impurity in Al2O3 grains increased with increasing WO3 content of the material compacts; A gradual lowering of laser power for samples irradiated at the maximum power in the process of synthesis could decrease the content of W impurity in Al2O3 grains; And a release of W impurity from Al2O3 grains me brought to by heating samples at high temperature for a long time. The measurement for the electrical properties of the samples show that they were closely related to the W content in Al2O3 grains of the ceramics. The higher the impurity content, the larger the material conductivity.

关 键 词：电子陶瓷 电子显微分析 氧化铝 氧化钨 激光合成 

分 类 号：TQ174.756[化学工程—陶瓷工业]