窄禁带半磁半导体Hg_(1-x)Mn_xTe的磁化强度  

Magnetization of Narrow GaP Semimagnetic Semiconductor Hg_(1-x)Mn_x Te

作　　者：陈辰嘉[1] 王学忠[1] 刘继周[1] R.R.Galazka 

机构地区：[1]北京大学物理系 [2]波兰科学院物理研究所

出　　处：《Journal of Semiconductors》1989年第7期529-533,共5页半导体学报（英文版）

基　　金：国家自然科学基金委员会科学基金;第三世界科学院研究资助

摘　　要：本文报道用提拉法测量Hg_(1-x)Mn_xTe单晶磁化强度的实验结果.在低温1.5K-30K范图内,磁场强度为0-7万高斯下,测量了不同组分x=0.06,0.08,0.12,0.16的Hg_(1-x)Mn_xTe磁化强度与组分,温度和磁场强度的关系.采用分子场近似模型,用类布里渊函数,最小二乘法对实验结果进行了拟合和分析.结果表明在本文x值范围内,理论与实验符合较好,证实了锰离子间存在强的反铁磁交换耦合.The magnetization measurements of Hg_(1-x)Mn_xTe for samples with x=0.06,0.08, 0.12,0.16 in the temperature range 1.5K to 30K and magnetic fields up to 7T have been carried outby using the extraction method.Based on the mean field theory,a modified Brillouin func-tion is fitted with the data very well over the entire range.The inverse susceptibility is showna Curie-Weiss behavior even at high field with a paramagnetic Curie temperature and indica-tes that there is an antiferromagnetic exchange coupling among Mn ions.

关 键 词：磁化强度 窄禁带 半磁半导体 

分 类 号：TN307[电子电信—物理电子学]