择优生长的多晶硅压阻统计理论  

Statistical Analysis for the Sensitivity of Polysilicon Piezoresistance

作　　者：赵甘鸣 鲍敏杭[1] 

机构地区：[1]复旦大学电子工程系

出　　处：《Journal of Semiconductors》1989年第9期693-701,共9页半导体学报（英文版）

基　　金：传感技术联合开放研究实验室支持的课题

摘　　要：本文报道了计算择优生长的多晶硅压阻灵敏度的统计平均理论,由此得到了〈100〉、〈110〉〈111〉、〈211〉、〈311〉、〈331〉等低指数晶向择优生长的p型和n型多晶硅的平均晶粒压阻系数.将这些结果应用到具有多重择优晶向的多晶硅材料,经过计算可进一步得到多晶硅力敏电阻的灵敏度.对于制作在矩形膜中心区域的一系列多晶硅电阻,实验得到的结果与理论分析的结果符合得很好.这些结果为多晶硅压阻型压力传感器的设计提供了有效的手段.The statistical analysis for the piezoresistive sensitivity of pclysilicon thin film with specialprtferential orientations is presented. Both n-type and p-type average grain piezoresistive coef-ficients of polysilicon with the preferential orientations of <100>、<110>、<111>、<211>、<311> and <331> have been caculated. By using these results and x-ray texture ofpolysilicon, the sensitivity of polysilicon piezoresistance has been obtained.To verify the theo-retical results,the experimental devices are made at the center of a rectangular diaphragm.The experimental results agree with the expected theoretical analysis. Therefore, these resultsare very useful for the design of polysilicon piezoresistive pressure sensors.

关 键 词：硅 传感器 力敏电阻器 灵敏度 

分 类 号：TN304.01[电子电信—物理电子学]