细密刻线多层膜的磁电阻特性和FMR谱  

Magnetoresistance and FMR Spectrum for 81NiFe/Cr Multilayer Etched Fine Slots

作　　者：陈慧余[1] 罗有泉[1] 付绍军[1] 

机构地区：[1]国家同步辐射实验室

出　　处：《中国科学技术大学学报》1995年第4期397-401,共5页JUSTC

基　　金：国家自然科学基金

摘　　要：研究了细密到线（５００线／ｍｍ）的８１ＮｉＰｅ／Ｃｒ多层膜的磁电阻和铁磁共振（ＦＭＲ）谱，发现在这种多层膜中的畴模铁磁共振（ＤＭＦＭＲ）并非与条形畴相联系．证实了横向磁电阻响应中的Ｂａｒｋｈａｕｓｅｎ噪音（来源于畴壁不可逆的跳跃）消失了．Magnetoresistance and ferromagnetic resonance(FAR) spectrum for 81NiFe/Cr multilayer etched fine slots(5001ine/mm) are investigated.It is found that the domain mode ferromagnetic resonance(DMFMR) in thes multilayer is not associated with the stripe domain.Also it is shown that the Barkhausen noise in the transverse magnetoresistance response of this multilayer originating from the domain wall irreversible jump disappears.

关 键 词：多层膜 磁电阻 铁磁共振 畴模铁磁共振 

分 类 号：O484.4[理学—固体物理]