1.55μm GaInAsP/InP DFB-DC-PBH激光器  

1.55μm InGaAsP/InP DFB-DC-PBH Laser Diode

作　　者：赵嵩山 马磐[1] 周宁[1] 杨新敏 董志江[1] 

机构地区：[1]武汉邮电科学研究院电信器件公司

出　　处：《Journal of Semiconductors》1989年第9期712-716,共5页半导体学报（英文版）

摘　　要：在n-InP衬底或GaInAsP波导层上,使用氩离子激光器全息曝光方法刻制二级光栅,进行低温液相外延生长.再利用已有的DC-PBH激光器的制作工艺技术,构成了分布反馈双沟道平面掩埋异质结激光器(DFB-DC-PBH LD).15℃连续工作最低阈值电流为63mA,典型值70-120mA,线性输出光功率大于4mW,外微分量子效率为5～8.3％,主模波长λ温度漂移系数△λ/△T为0.8～1.0A/℃,静态单纵模较好,在400Mbit/s,700Mbit/s和1.4Gbit/s,20mA脉冲电流随机码调制下,单纵模工作稳定.相同条件下,DC-PBH LD单纵模明显变为多模或跳模.ON an n-InP substrate or an GaInAsP waveguide layer,the authors have engraved the se-cond-order grating by holographic lithography and fabricated DFB-DC-PBH LDs with tech-nology of DC-PBH LD.The lowest CW threshold current was 63 mA at temperature of 15℃,and the typical values of the threshold current were in the range of 70-120 mA. The tempe-rature dependence of lasing wavelength was about 0.8-1.0A/deg.20 percent of the LD's ex-hibited stable static single-mode operation.Under 700 Mbit/s and 1.4Gbit/s pseudorandommodulation rates,the single longitudinal mode output remains in good stability.

关 键 词：激光器 分布反馈 二级光栅 

分 类 号：TN248.4[电子电信—物理电子学]