GaAs/AlGaAs多量子阱激光器  

Multiple Quantum Well Laser Prepared by Molecular Beam-Epitaxy and Device Characteristics

作　　者：张永航[1] 孔梅影[1] 陈良惠[1] 王启明[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1989年第10期788-793,共6页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：用国产的分子束外延设备生长出多量子阱激光器结构,在室温下,其宽接触阈电流密度为3000A/cm^2,质子轰击条形器件单管最佳阈值电流为128mA,单面连续输出功率可大于22mw,在一定注入范围内可单纵模工作,最高单面微分量子效率达34％,激射波长在8590～8640埃之间,远场光强分布呈单峰,在室温附近的特征温度T_o为202K.对外延材料和器件的初步研究表明,AlGaAs材料特别是掺杂的AlGaAs材料质量不理想是导致激光器阈电流密度不够低的可能原因.Multiple quantum well lasers have been made by a home-made molecular-beam-epitaxysystem.At room temperature, the best threshold current density of the broad-area contact de-vice is 3000 A/cm^2, and proton bombarded stripe geometry MQW laser has a threshold cur-rent of 128 mA. Single longitudinal mode operation is also observed in a wide current in-jection range. The highest external differential quantum efficiency is 34% per facet,basingwavelengths are in the range from 8590A to 8640A and far-field optical intensity distributionexhibits a single peak.The characteritic temperature is 202 K at the temperatures near 300 K.The details of molecular beam epitaxial procedures and growth conditions for MQW laser arealso reported.The investigations on grown materials and devices have shown that the grownAlGaAs materials,especielly the doped AlGaAs, are not ideal and result in a not very lowthreshold current density.

关 键 词：分子束外延 量子阱 半导体 激光器 

分 类 号：TN248.4[电子电信—物理电子学]