小灵敏面积PIN半导体探测器性能改进  

TheImprovement ofSmallSensitiveAreaPIN SemiconductorDetectorBehavior

作　　者：徐荣昆[1] 周殿忠[1] 李正宏[1] 

机构地区：[1]中国工程物理研究院核物理与化学研究所

出　　处：《核电子学与探测技术》1995年第4期254-257,共4页Nuclear Electronics & Detection Technology

摘　　要：本文对原ＰＩＮ半导体探测器信号引出线结构线路进行了分析，为了消除小灵敏面积ＰＩＮ探测器振荡现象，把原信号引出线结构改进成微带结构，并对改进后的探测器时间响应性能和线性电流进行了实验测量。The signal output line instructure of former PIN semiconductor detector is analysed in this paper,theeignal output line structure is changed into microband structure in order to remove the oscillation of smallsensitive area PIN semiconductor detector,the time response and linear current of changed PIN semiconduc- tor detector were measured. (

关 键 词：PIN 半导体探测器 微带 灵敏面积 

分 类 号：TL816[核科学技术—核技术及应用]