硅衬底上GaAlAs/GaAs单量子阱激光器  

GaAlAs/GaAs SQW SCH LD Fabricated on Si by MOCVD

作　　者：庄婉如[1] 石志文[1] 杨培生[1] 梅野正義 神保孝志 曾我哲夫 

机构地区：[1]中国科学院半导体所 [2]日本名古屋工业大学电气情报工学科

出　　处：《Journal of Semiconductors》1989年第12期960-964,共5页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：采用MOCVD方法在硅衬底上生长了带应力超晶格的GaAlAs/GaAs单量子阱外延片,并用质子轰击隔离法制成10微米条形单量子阱激光器.在室温下加脉冲电流(重复频率26KHz,脉宽1μs)观察到受激发射.最低阈电流92mA、激射波长849.2nm,外微分量子效率11％.GaAlAs/GaAs layers with SLS were grown on Si substrates by MOCVD. The isolatedstripe of 10 μm stripe LDs were made by proton bombartment.LDs were stimulated under pu-lse 20 kHz, lμs at 295K. The lowest threshold current and peak wavelength are 92 mA and849.2 nm, respectively.The external differential quantum efficiency is 11%.

关 键 词：半导体 激光器 光电集成 量子阱 硅 

分 类 号：TN248.4[电子电信—物理电子学]