点籽晶降温法快速生长大尺寸磷酸二氢钾晶体  

Rapid growth of large size KDP crystal by temperature reduction method

作　　者：庄欣欣[1] 叶李旺[1] 汪剑成[1] 苏根博[1] 郑国宗[1] 贺友平[1] 林秀钦[1] 胡国行[2] 赵元安[2] 

机构地区：[1]中国科学院福建物质结构研究所,福州350002 [2]中国科学院上海光学精密机械研究所,上海201800

出　　处：《强激光与粒子束》2010年第12期2857-2859,共3页High Power Laser and Particle Beams

基　　金：国家高技术发展计划项目

摘　　要：大尺寸磷酸二氢钾(KDP)晶体在惯性约束聚变系统中主要用于制作变频及开关光学元件。在传统生长技术基础上,开展了点籽晶降温法大尺寸KDP晶体的快速生长技术研究,设计制作大型培养槽及载晶架,采用过热注种方式试验点籽晶生长,培育出尺寸50 cm×50 cm×41 cm的KDP大单晶,其(100)面生长速度稳定为15 mm/d。晶体在300～1 100 nm波段的透过光谱与常规生长的等同,影响晶体生长及光学品质的主要的金属杂质离子Fe3+,Cr3+,Al3+等含量少于10-6,晶体激光损伤基频阈值30 J/cm2,三倍频阈值达到8.6 J/cm2。Potassium dihydrogen phosphate(KDP) and its deuterated analog are the crystals primarily selected for Pockel's cells or frequency conversion plates in inertial confinement fusion systems. Crystals rapidly grown from point seed by temperature reduction method are presented. The growth of large size crystals including the designation of big vessel, crystal holder and seed-planting under over-heating systems are introduced. Crystals with size up to 50 cm × 50 cm × 41 cm were obtained successfully. It is shown that crystals grown at rapid growth rate, 15 mm/day the average, possess the optimal transmission properties as those grown by conventional method. The content of impurity ions, such as Fe3+, Cr3+, Al3+ that affect the prismatic faces of KDP are determined as less than 1 × 10-6. Laser-induced damage threshold for crystals was measured to be about 30 J/cm2 (pulse width 9 ns) at 1064 nm and 8.6 J/cm2 (pulse width 6 ns) at tripler frequency respectively.

关 键 词：籽晶生长 降温法 快速生长 大尺寸 磷酸二氢钾晶体 reduction method KDP晶体 生长技术 设计制作 杂质离子 阈值 透过光谱 速度稳定 晶体生长 技术基础 激光损伤 光学元件 惯性约束 三倍频 大单晶 

分 类 号：O4[理学—物理]