基于温度补偿的无运放低压带隙基准源设计  

Design of low voltage bandgap reference sources with temperature compensation but without operational amplifier

作　　者：李凯[1] 周云[1] 蒋亚东[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《现代电子技术》2012年第4期145-147,151,共4页Modern Electronics Technique

基　　金：国家自然科学基金资助项目(61021061);电子科技大学富通翱翔计划科研基金(FTAX201013)

摘　　要：设计了一种带温度补偿的无运放低压带隙基准电路。提出了同时产生带隙基准电压源和基准电流源的技术,通过改进带隙基准电路中的带隙负载结构以及基准核心电路,基准电压和基准电流可以分别进行温度补偿。在0.5μmCMOS N阱工艺条件下,采用spectre进行模拟验证。仿真结果表明,在3.3V条件下,在-20～100℃范围内,带隙基准电压源和基准电流源的温度系数分别为35.6ppm/℃和37.8ppm/℃,直流时的电源抑制比为-68dB,基准源电路的供电电压范围为2.2～4.5V。A low voltage bandgap reference circuit with temperature compensation but without operational amplifier is designed.Techniques for generating both the bandgap reference voltage source and reference current source are proposed.By modifying the bandgap load or the reference core circuit in the bandgap reference circuit,the temperature dependences of the reference voltage output and the current output can be compensated separately.The Spectre is adopted to carry out the simulation verification under the condition of 0.5 μm CMOS N well technology.The simulation result shows that while they are operating at 3.3 V and in-20 ℃~100 ℃,the temperature coefficients of bandgap reference voltage source and the current source are 35.6 ppm/℃ and 37.8 ppm/℃ PSRR is-68 dB at DC,and the power supply voltage of the reference source circuit is at the range of 2.2~4.5 V.

关 键 词：基准电压 基准电流 带隙负载结构 温度系数 电源抑制比 

分 类 号：TN4[电子电信—微电子学与固体电子学]