高速半导体发光二极管的研究  

The Study of High-speed Semicondutor LEDs

作　　者：王永捷[1] 张维连[1] 

机构地区：[1]河北工业大学材料学院,天津300130

出　　处：《河北工业大学学报》2005年第4期65-68,共4页Journal of Hebei University of Technology

摘　　要：研究了LED的高速调制特性,提出了电流限制层结构,在LED器件的驱动电路上增加一对并联的RC元件的新的设计思想,该技术在工艺上很容易实现且在改善高速LED性能方面有实际应用价值.The high-speed modulation characteristics of the LEDs are studied and the current-limited layer structure are put forward, and present a new designing method of adding a pair of RC devices outside the LED chips. This technology could be easy expected and has applied value in improving high-speed capability of LEDs.

关 键 词：LED 调制带宽 本征频率相应 寄生频率相应 电流限制层 

分 类 号：TN312.8[电子电信—物理电子学]