赝火花脉冲电子束传输中束斑分析  

Analysis of pseudospark pulsed electron beam shape in transmission

作　　者：刘志坚[1] 江兴流[1] 乐小云[1] 文雄伟[2] 

机构地区：[1]北京航空航天大学理学院,北京100083 [2]清华大学机械学院,北京100084

出　　处：《物理学报》2005年第9期4229-4235,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10175003)资助的课题.~~

摘　　要：通过赝火花强流脉冲电子束对酸敏变色片和单晶硅的轰击试验,结合束流自箍缩效应进行理论计算,对赝火花脉冲电子束传输中束斑的变形进行了研究与分析.结果表明椭圆形轰击束斑是由通过旁路电容的瞬态电流产生的方位角磁场所引起的,并且提出了解决束斑变形的有效方法.The beam shape distortion of the pseudospark pulsed electron beam in transmission has been observed by the beam bombardment of the color changeable film and the single crystal silicon. Based on the beam self-pinch effect, the mechanisms of the beam shape distortion have been analyzed by the theoretical calculation of the radial force of electron beam. The results showed that the elliptic beam shape was caused by the azimuthal magnetic field of transient currents, which past through the parallel charging capacitor, and the method for solving beam shape distortion in transmission was also presented.

关 键 词：脉冲电子束 赝火花放电 束斑 自箍缩效应 强流脉冲电子束 电子束传输 束斑 火花 理论计算 箍缩效应 旁路电容 有效方法 单晶硅 

分 类 号：O461.2[理学—电子物理学]