合成孔径雷达实时成像转置存储器的两页式结构与实现  

The Structure and Implementation of the Two-Frame Corner Turn Memory(CTM)in Real Time Imaging of SAR

作　　者：卢世祥[1] 韩松[1] 王岩飞[1] 

机构地区：[1]中国科学院电子学研究所,北京100080

出　　处：《电子与信息学报》2005年第8期1226-1228,共3页Journal of Electronics & Information Technology

摘　　要：该文介绍了合成孔径雷达实时成像处理器转置存储器的基本工作原理,讨论了转置存储器的两种主要结构:三页式结构和两页式结构,并指出了这两种结构各自的优缺点。重点介绍了两页式转置存储器结构的典型应用,给出了以双数据率同步动态内存(DDRSDRAM)作为主存储器构成的两页式转置存储器的电路结构和实现结果。The Corner Turn Memory（CTM） for real time imaging of the Synthetic Aperture Radar（SAR）is presented in this paper. Two types of structure of CTM： the three-frame and the two-frame are discussed, of which the merits and flaws are compared. The representative application of the two-frame CTM is introduced predominantly, of which the implementation in circuit and the result are given with the Double Data Rate Synchronous Dynamic RAM（DDR SDRAM）served as the main memory.

关 键 词：合成孔径雷达 转置存储器 三页式 两页式 双数据率同步动态内存 

分 类 号：TN958[电子电信—信号与信息处理] TN957.5[电子电信—信息与通信工程]