SILAR法制备化学计量CuInS_2薄膜  

Preparation of Stoichiometric CuInS_2 Thin Films by Successive Ionic Layer Absorption and Reaction (SILAR) Method

作　　者：石勇[1] 靳正国[1] 李春艳[1] 安贺松[1] 邱继军[1] 

机构地区：[1]天津大学材料学院先进陶瓷与加工技术教育部重点实验室,天津300072

出　　处：《无机化学学报》2005年第9期1286-1290,共5页Chinese Journal of Inorganic Chemistry

基　　金：天津市自然科学基金资助项目(No.F103004)。

摘　　要：在室温下,以不同cCu/cIn的CuCl2和InCl3混合溶液作为阳离子前驱体,Na2S水溶液为硫源,利用连续离子层吸附反应法(SILAR)在玻璃基底上制备了CuInS2薄膜。XRD结果表明,当cCu2+/cIn3+在1￣1.5范围内均可形成具有黄铜矿结构的CuInS2薄膜。SEM观察到随cCu2+/cIn3+的升高,薄膜表面颗粒长大并出现团簇聚集。通过XPS测定薄膜表面的化学组成证明当cCu2+/cIn3+=1.25时,CuInS2薄膜接近其标准的化学计量组成。此时薄膜的吸收系数大于>104cm-1,禁带宽度Eg为1.45eV。Stoichiometries CuInS2 films were prepared by successive ionic layer absorption and reaction （SILAR） method. The films were deposited on glass substrates using CuCl2 and InCl3 mixing solution with different ionic ratios （CCu/CIn） as cation precursor, and Na2S as the anion precursor. XRD analysis demonstrated that CulnS2 film was chalcopyrite structure when CCu/CIn was 1.25. With the increase of CCu/CIn, the formation of bigger grains and large coherent agglomerates were observed by SEM. XPS results showed that a stoichiometric CulnS2 film could be obtained when CCu/CIn ratio in solution was 1.25, for which the absorption coefficient was 〉 10^4 cm^-1 and the optical band gap Eg was 1.45 eV.

关 键 词：铜铟硫薄膜 连续离子层吸附反应法 化学计量 

分 类 号：O614.242[理学—无机化学]