几种紫外薄膜材料的阈值场强分析  

Analysis of the Damage Electric Field Strengths for Several Ultraviolet Thin Film Materials

作　　者：胡江川[1] 王万录[2] 马平[1] 陈松林[1] 

机构地区：[1]成都精密光学工程研究中心,四川成都610041 [2]重庆大学数理学院,重庆400030

出　　处：《重庆大学学报（自然科学版）》2005年第8期89-91,116,共4页Journal of Chongqing University

基　　金：国家863项目资助课题(863-804-2)

摘　　要：采用多光子吸收、雪崩电离模型和多光子吸收与雪崩电离相结合的联合模型计算了几种紫外光学薄膜材料的激光诱导损伤阈值场强,得出雪崩离化模型在紫外部分已不再适用,联合模型的理论结果可用作实验参考.分析了薄膜阈值电场与入射激光频率脉宽的关系,定性地说明了材料带宽与阈值场强的关系.The laser induce damage threshold electric field instensity strengths of different materials used in the ultraviolet region, have been calculated by the model of multiphoton absorption ionization, avalanche model and a combination of the two. Avalanche model can not be used in the ultraviolet region, the result of the combination model can be used as reference. The authors analyze the relations between the laser induce damage electric field strengths to optical thin film and laser frequency, pulse duration. The relations between materials band gap and damage threshold electric field strengths is analyzed.

关 键 词：光学薄膜 阈值电场 紫外 

分 类 号：O484.4[理学—固体物理]