CMOS Schmitt触发器的设计与模拟  

Design and Simulation of CMOS Schmitt Trigger

作　　者：程坤[1] 秦明[1] 张中平[1] 黄庆安[1] 

机构地区：[1]东南大学MEMS教育部重点实验室,南京210096

出　　处：《电子器件》2005年第3期505-508,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金(60476019);江苏省自然科学基金(BK2003052)资助项目。

摘　　要：分析了普遍的六管CMOSSchmitt触发器管子宽长比设计公式,从触发器的工作原理出发指出了其不尽合理之处。根据I.M.Fianosky提出的触发器实际的阈值电平理论,考虑M2和M5两管对阈值电平的影响,提出了新的CMOSSchmitt触发器宽长比设计公式。举例说明了在一定的设计考虑和工艺条件下如何利用这一公式进行设计。An improved design formula of CMOS Schmitt trigger is introduced. The transistor scale design formula of general CMOS Schmitt trigger is analyzed and the drawback is taken into account. From the discussion, something not proper to the formula is pointed out. Based on the theory of the true threshold voltage of the trigger presented by I. M. Fianosky, the influence on threshold voltage caused by M2 and M5 is considered. A practical example is given to explain how to design a CMOS Schmitt trigger with the new design formula under certain design and process conditions.

关 键 词：Schmitt触发器 阈值电平 触发特性 

分 类 号：TN402[电子电信—微电子学与固体电子学]