r面白宝石单晶的温梯法生长及缺陷研究  

Defect Study of r-plane Sapphire Single Crystal Grown by Temperature Gradient Technique

作　　者：彭观良[1] 周国清[1] 庄漪[1] 邹军[1] 王银珍[1] 李抒智[1] 杨卫桥[1] 周圣明[1] 徐军[1] 

机构地区：[1]中国科学院上海光学精密机械研究所

出　　处：《人工晶体学报》2005年第4期653-656,共4页Journal of Synthetic Crystals

摘　　要：本文描述使用温梯法(TGT)生长(1102)方向的白宝石单晶,应用X射线双晶摇摆曲线(XRC)测定了晶体内部的完整性,再利用KOH熔体腐蚀出样品的r面(1102)上的位错蚀坑,借助扫描电子显微镜(SEM)进行观察,发现r面白宝石的位错腐蚀坑呈等腰三角形,并且有台阶状结构,并分析了位错的成因。A high quality sapphire single crystal oriented along （1-↑102） was grown by the temperature gradient technique （TGT） and the crystal quality was investigated using X-ray rocking curve （XRC）. The etch pits of dislocations were revealed on the r-plane （1-↑102 ） sapphire by using a melted KOH as etchants. Scanning electron microscope （SEM） demonstrates that the shapes of etch pits located in r- plane of sapphire look like a isosceles triangle with sidestep-like structure. And the mechanism of the formation of dislocations was discussed.

关 键 词：温梯法 r面白宝石 位错 化学腐蚀 腐蚀坑 缺陷 

分 类 号：O771[理学—晶体学]