1.23GeV Fe离子在C_(60)薄膜中形成潜径迹的Raman谱分析  

Investigation of latent tracks of 1.23 GeV Fe ions in C_(60) film by Raman spectra

作　　者：金运范[1] 姚存峰[1] 王志光[1] 谢二庆[2] 宋银[1] 孙友梅[1] 张崇宏[1] 刘杰[1] 段敬来[1] 赵志明[1] 

机构地区：[1]中国科学院近代物理研究所,兰州730000 [2]兰州大学物理科学与技术学院,兰州730000

出　　处：《核技术》2005年第9期667-670,共4页Nuclear Techniques

基　　金：国家自然科学基金资助项目(10175084;10125522)

摘　　要：用能量为1.23GeV的快Fe离子辐照了多层堆叠的C60薄膜。用Raman散射技术分析了快Fe离子在C60薄膜中由强电子激发引起的效应,主要包括辐照引起C60分子的聚合及其高温、高压相(HTHP)的形成,和在髙电子能损下C60晶体点阵位置上的C60分子向非晶碳的转变。由此演绎出了快Fe离子在C60薄膜中的损伤截面或潜径迹截面σ和潜径迹的半径Re,及其随沉积在电子系统中的能量密度的变化而变化的规律。The irradiation experiments of thin C60 film stacks were performed with 1.23 GeV ^56Fe ions delivered by HIRFL at Lanzhou, China. The strong electronic excitation effects including the formation of latent tracks were analyzed by means of Raman scattering spectroscopy. The analysis results indicated that some components of high-pressure-high-temperature phase of the polymerized C60 appeared in the irradiated C60 films and finally amorphous transformation of C60 molecule took place. The damage cross-sections of the C60 molecule or cross-section of latent track of Fe ions in C60 films σ deduced from the Raman spectra data are between 1.1 and 4.5nm^2 for the electronic energy losses from 3.5 to 8.7 keV/nm and the corresponding efficient radii of the latent tracks are between 1.0 and 2.1nm. The electronic energy transfer dominates the damage process of C60 films. The partial recovery of the damage in the irradiated C60 films at certain electronic energy losses is attributed to an annealing effect of strong electronic excitation.

关 键 词：潜径迹 强电子激发效应 C60薄膜 快Fe离子 RAMAN谱 

分 类 号：O571.33[理学—粒子物理与原子核物理]