BiCMOS例相器延迟特性的计算与分析  

Analysis and Calculation of Delay Time for BiCMOS Inverter

作　　者：吴金[1] 魏同立[1] 于宗光 

机构地区：[1]东南大学微电子中心

出　　处：《Journal of Semiconductors》1996年第2期126-130,共5页半导体学报（英文版）

基　　金：国家自然科学基金;博士点基金

摘　　要：本文对ＢｉＣＭＯＳ倒相器延迟特性进行了系统研究，在分析比较ＭＯＳ与双极器件及其组成电路不同状态下的工作特点基础上，得到ＢｉＣＭＯＳ倒相电路在小注入、大注入和集电极寄生电阻等不同限制条件下的延迟时间的解析关系式，结果表明该模型具有近似于ＳＰＩＣＥ数值模拟精度，为各类高性能ＢｉＣＭＯＳ电路的优化设计与分析提供了理论依据．Abstract A system research of delay properties for BiCMOS inverter is presented. Based on the analysis and comparison of the characters of MOSFET and BJT in the circuits under different operation conditions, the analytical relations of BiCMOS delay time under different restrict conditions, such as in low or high injection and in collector parasitic resistor limited region, are given. The calculation results show that the new model has a similar precision with that of SPICE numerical model, and will give a guidelines in theory in high performance BiCMOS circuits design and analysis.

关 键 词：BiCMOS倒相器 倒相器 延迟特性 计算 分析 

分 类 号：TN386.1[电子电信—物理电子学]