InSb磁敏电阻器导电机理及可靠性  

Conduction Mechanism and Reliability of InSb Magnetoresistor

作　　者：张之圣[1] 胡明[1] 刘志刚 王文生[1] 

机构地区：[1]天津大学电子工程系

出　　处：《Journal of Semiconductors》1996年第2期136-140,共5页半导体学报（英文版）

基　　金：国家"七;五"科技攻关资助

摘　　要：本文详细讨论了ＩｎＳｂ磁敏电阻器的导电机理，在文献［１］、［２］的基础上，提出了提高它的灵敏度的途径．本文首次研究了ＩｎＳｂ磁敏电阻器的可靠性，通过可靠性寿命试验，其失效率λ（ｔ）＜１×１０－５／ｈ．Abstract The conduction mechanism of InSb magnetoresistor is discussed in detail. Based on the paperL[1,2], We have proposed a new way for improving its sensitivity. In this paper,we study the reliability of InSb magnetoresistor for the first fime. Its failure rate is<1 × 10-5/h obtained from the reliability lifetime test.

关 键 词：INSB 磁敏电阻器 导电机理 可靠性 电阻器 

分 类 号：TM54[电气工程—电器]