硅纳米管的水热法合成与表征  

Hydrothermal Synthesis and Characterization of Silicon Nanotubes

作　　者：裴立宅[1] 唐元洪[1] 陈扬文[1] 郭池[1] 张勇[1] 

机构地区：[1]湖南大学材料科学与工程学院,长沙410082

出　　处：《Journal of Semiconductors》2005年第8期1562-1566,共5页半导体学报（英文版）

基　　金：教育部博士点基金资助项目(批准号:20040532014)~~

摘　　要：采用水热法成功合成了新型的硅纳米管一维纳米材料,并采用透射电子显微镜、选区电子衍射分析、能量色散光谱及高分辨透射电子显微镜对合成的硅纳米管进行了表征.研究表明硅纳米管是一种多壁纳米管,为立方金刚石结构,生长顶端呈半圆形的闭合结构,由内部为数纳米的中空结构,中部为晶面间距约0.31nm的晶体硅壁层,最外层为低于2nm的无定形二氧化硅等三部分组成.A new kind of hollow one-dimensional nanometer structure, silicon nanotubes （SiNTs）,is synthesized by the hydrothermal method. The SiNTs are characterized by transmission electron microscopy, selected area electron diffraction analysis, energy dispersive X-ray spectrum,and high-resolution transmission electron microscopy. Research results demonstrate that the SiNTs with cubic diamond structure are the kind of multiwall SiNTs and have close caps at the tips. The structures of SiNTs are hollow inner pore with a diameter of several nanometers in the middle,a crystal silicon wall layer with about 0.31nm interplanar spacing, and an amorphous silica outer layer of less than 2nm.

关 键 词：硅纳米管 水热法 结构 表征 

分 类 号：TN304[电子电信—物理电子学]