同轴型强流电子束二极管的一种解析近似  

Approximate analytic solution of coaxial intensive electron beam diode

作　　者：邵浩[1] 刘国治[1] 杨占峰[1] 

机构地区：[1]西北核技术研究所,陕西西安710024

出　　处：《强激光与粒子束》2005年第8期1141-1144,共4页High Power Laser and Particle Beams

基　　金：国家863计划项目资助课题

摘　　要：从描述电子束运动的基本方程出发,引入一定条件下的近似,获得了一种实用的同轴二极管电流、电压与几何参数关系的近似解析解.给出了同轴二极管阻抗、间隙电压分布与二极管外加电压以及结构参数之间的关系式,并与1维模型精确数值解进行比较分析.采用了PIC数值模拟方法对该理论分析结果在常用参数范围内的准确性进行了验证,获得了一致的结果.与相对论条件下的实验结果数据相比,在二极管电压为300～700 kV时实验结果与该理论估算值非常接近.According to the Maxwell equations, an analytic solution related with coaxial diode current, applied voltage and geometry parameters is obtained by introducing certain approximation. The relation among the coaxial diode impedance, the potential distribution in diode gap and the external voltage are also derived, and the relative error is analyzed comparing with the precision numerical evaluation of the 1D analytic model. Meanwhile, PIC simulations are carried out to test the accuracy of the analytic equations under practical parameters, which yield consistent results. The diode impedance obtained by the analytic solution is very close to the experimental data under relativistic voltage range of 300～700 kV.

关 键 词：等离子体 强流电子束二极管 脉冲功率技术 高功率微波 

分 类 号：TN752.5[电子电信—电路与系统]