低引导磁场下环形强流电子束产生实验研究  

Generation of intense annular electron beam generated by foilless diode in low guide magnetic field

作　　者：丁臻捷[1] 刘国治[1] 苏建仓[1] 俞建国[1] 丁永忠[1] 

机构地区：[1]西北核技术研究所,陕西西安710024

出　　处：《强激光与粒子束》2005年第8期1210-1212,共3页High Power Laser and Particle Beams

基　　金：国家863计划项目资助课题

摘　　要：针对基于SOS脉冲功率源S-5N的输出特点,利用PIC数值模拟软件,为S-5N设计了能够工作在低引导磁场条件下的无箔二极管系统,并在S-5N脉冲功率源上进行了低引导磁场环形强流电子束产生的实验研究。在引导磁场为0.5 T条件下,无箔二极管电流输出波形近似为梯形波,脉冲上升沿约9 ns,平顶部分约26 ns,二极管电压420 kV,电流2.7 kA,束斑平均半径约16 mm,具有良好的均匀性。An experimental system of foilless diode operating in low guiding magnetic field was designed on the pulsed power generator S-5N. In the experiment, a trapezium-shape wavefrom was obtained with a rise time of about 9 ns and a flat top of about 26 ns when magnetic field strength was 0.5 T. The diode voltage was 420 kV and the current was 2.7 kA. The average radius of the beam spot was 16 mm. There was a good agreement between the design and experimental results. It was observed that the diode impedance increases following the guiding magnetic field until it reaches a turning point.

关 键 词：无箔二极管 强流环形电子束 低引导磁场 

分 类 号：TN78[电子电信—电路与系统]