Effect of Chemical Doping and Ion Implantation on Cond uctivity of Poly(p-phenylene vinylene) Derivatives  

作　　者：LI Bao-ming WU Hong-cai LIU Xiao-zeng LI Xiao-qi GAO Chao 

机构地区：[1]Institute of Photoelectric Technol. and Solar Energy,School of Electron. and Inform. Eng. , Xi＇an Jiaotong University, Xi＇an 710049, CHN

出　　处：《Semiconductor Photonics and Technology》2005年第3期188-191,共4页半导体光子学与技术（英文版）

基　　金：National Natural Science Foundation of China (60277002) ; Scientific Research Foundation of Xi’an JiaotongUniversity

摘　　要：The surface conductivity of poly [ 2-methoxy-5-（3＇-methyl） butoxy]-p-phenylene vinylene （PMOMBOPV） films doped with FeCl3 and H2SO4 by chemical method and implanted by N^＋ ions was studied and the comparison of environmental stability of conductive behavior was also investigated. The energy and dose of N^＋ ions were in the rang 15～35 keV and 3. 8×10^15～9. 6×10^16 ions/cm^2, respectively. The conductivity of PMOMBOPV film was enhanced remarkably with the increases of the energy and dose of N^＋ ions. For example, the conductivity of PMOMBOPV film was 3. 2×10^-2S/cm when ion implantation was performed with an energy of 35 keV at a dose of 9. 6 × 10^14 ions/cm^2 , which was almost seven orders of magnitude higher than that of film unimplanted. The environmental stability of conductive behavior for ionimplanted film was much better than that of chemical doped films. Moreover, the conductive activation energy of ion-implanted films was measured to be about 0.17 eV.The surface conductivity of poly [2-methoxy-5-(3 '-methyl)butoxy]-p-phenylene vinylene (PMOMBOPV) films doped with FeCl3 and H2 SO4 by chemical method and implanted by N+ ions was studied and the comparison of environmental stability of conductive behavior was also investigated. The energy and dose of N+ions were in the rang 15～35 kev and 3. 8× 1015 ～9. 6× 1016 ions/cm2, respectively. The conductivity of PMOMBOPV film was enhanced remarkably with the increases of the energy and dose of N+ ions. For example, the conductivity of PMOMBOPV film was 3.2 × 10-2 S/cm when ion implantation was performed with an energy of 35 kev at a dose of 9. 6 × 1016 ions/cm2 , which was almost seven orders of magnitude higher than that of film unimplanted. The environmental stability of conductive behavior for ionimplanted film was much better than that of chemical doped films. Moreover, the conductive activation energy of ion-implanted films was measured to be about 0.17 eV.

关 键 词：Ion implantation Chemical doping Poly[2-methoxy-5-（3＇-methyl）butoxy]-p-phenylene vinylene Surface conductivity Conductive activation energy 

分 类 号：TN304.52[电子电信—物理电子学]