掺杂磷钼酸根离子聚吡咯膜电极对磷钼酸根离子电位响应的研究  

Potentiometric Response of Phospho-molybdate lon-Doped Polypyrrole Film

作　　者：康彩艳[1] 张春光[1] 蒋勉[1] 周性尧[1] 

机构地区：[1]武汉大学化学系

出　　处：《分析试验室》1996年第3期6-9,共4页Chinese Journal of Analysis Laboratory

基　　金：国家自然科学基金

摘　　要：用循环伏安法研究了制备掺杂磷钼根离子聚吡咯化学修饰电极的条件；对其性能进行了电化学表征。电极对磷钼酸根（ＰＭｏ＿（１２）Ｏ）离子具有选择性电位响应，线性范围为１．０×１０￣（－５）～１．０×１０￣（－３）ｍｏｌ／Ｌ。斜率约为５０ｍＶ。测定了电极的有关性能参数。电极可用于无机磷含量的检测。Electroactive polypyrrole(PPy) film elec-trode was prepared by cyclic voltammetry inPMo_(12)O solution. Various factors affectingthe electropolymerization and electrochemicalbehaviour of PPy chemically modified electrodewere studied.The potential response mecha-nism of doping PMo_(12)O PPy film was alsodiscussed. A linear response was observed forPMo_(12)O in the concentration range of 1. 0×10￣(-5) ～1. 0×10￣(-3)mol/L with a slope of 50mV;The electrode has been applied to the determi-nation of inorganic phosphorus.

关 键 词：磷钼酸根 化学修饰电极 聚吡咯薄膜 无机磷 

分 类 号：O613.62[理学—无机化学] O657.1[理学—化学]