二氧化钒多晶薄膜的掺杂改性  

Modification of Polycrystalline Vanadium Dioxide Film by Doping Methods

作　　者：谢太斌[1] 李金华[1] 谢建生[1] 但迪迪[1] 范利宁[1] 袁宁一[1] 

机构地区：[1]江苏工业学院功能材料实验室,江苏常州213016

出　　处：《红外技术》2005年第5期393-398,共6页Infrared Technology

基　　金：国家自然科学基金(编号:60277019)江苏省自然科学基金(编号:BK2005023)资助项目

摘　　要：掺杂能明显改变二氧化钒薄膜的相变温度,影响其电学和光学性质。研究表明:W、Mo等大尺寸原子掺杂可以有效降低相变温度,而Al、P等小尺寸原子掺杂则使相变温度升高。综述、比较了不同掺杂方法和掺杂元素对相变、相变滞豫、电阻和透射性能的影响,介绍了用离子束增强沉积方法对二氧化钒薄膜掺杂改性的优点。综合分析表明,通过对二氧化钒多晶薄膜的掺杂改性,将相变温度降至室温附近,可以大大提高薄膜的室温电阻温度系数。Phase transition temperature （Tc） of VO2 thin films was changed obviously by doping methods and then the electrical and optical properties were influenced. It＇s indicated that the Tc can be reduced by doping with the elements of W, Mo, etc, while increased by doping with Al, P, etc. Effects of different doping methods and different impurity upon the phase transitions, temperature hysteresis, optical and electrical properties were compared. Based on the review, the advantage of modification for polycrystalline VO2 films formed by Ion Beam Enhanced Deposition （IBED） was introduced. It is clear that to increase the TCR of VO2 films greatly, the phase transition temperature of the VO2 films should decrease to the room temperature by doping methods.

关 键 词：二氧化钒薄膜 掺杂改性 相变 

分 类 号：TN213[电子电信—物理电子学] O552.6[理学—热学与物质分子运动论]