A Transfer Matrix-Based Analysis of Vertical-Cavity Semiconductor Optical Amplifiers  

作　　者：王刚 罗斌 潘炜 熊杰 

机构地区：[1]School of Information Science and Technolog3, Southwest Jiaotong University, Chengdu 610031

出　　处：《Chinese Physics Letters》2005年第10期2561-2564,共4页中国物理快报（英文版）

摘　　要：Based on the transfer matrix method, we present a new one-dimensional steady-state model of vertical-cavity semiconductor optical amplifiers （VCSOAs）, in which the longitudinal carrier concentration distribution in the active region and the discontinuity of the refractive index inside the cavity is taken into consideration. The model is theoretically proven to be a reliable one for describing the standing wave effect in a periodic gain structure. By using this model, some optical amplification characteristics of VCSOAs are investigated.Based on the transfer matrix method, we present a new one-dimensional steady-state model of vertical-cavity semiconductor optical amplifiers （VCSOAs）, in which the longitudinal carrier concentration distribution in the active region and the discontinuity of the refractive index inside the cavity is taken into consideration. The model is theoretically proven to be a reliable one for describing the standing wave effect in a periodic gain structure. By using this model, some optical amplification characteristics of VCSOAs are investigated.

关 键 词：LASER-AMPLIFIERS FABRY-PEROT DESIGN 

分 类 号：TN722[电子电信—电路与系统]