Self-Starting Passively Mode-Locking All-Solid-State Laser with GaAs Absorber Grown at Low Temperature  

作　　者：贾玉磊 令维军 魏志义 王勇刚 马骁宇 

机构地区：[1]Laboratory of Optical Physics, Institute of Physics. Chinese Academy of Sciences, Beijing 100080 [2]Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

出　　处：《Chinese Physics Letters》2005年第10期2575-2577,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 60225005 and 10227401, the Knowledge Innovation Programme of Chinese Academy of Sciences, and the National Hi-Tech ICF Committee of China.

摘　　要：We realize a stable self-starting passively mode-locking all-solid-state laser by using novel GaAs mirrors as the absorber and output coupler. The GaAs mirror is grown by the technology of metal organic chemical vapour deposition at low temperature. With such an absorber as the output coupler in the laser resonator, laser pulses with duration of 42ps were generated at a repetition rate of 400MHz, corresponding to the average power of 590mW.We realize a stable self-starting passively mode-locking all-solid-state laser by using novel GaAs mirrors as the absorber and output coupler. The GaAs mirror is grown by the technology of metal organic chemical vapour deposition at low temperature. With such an absorber as the output coupler in the laser resonator, laser pulses with duration of 42ps were generated at a repetition rate of 400MHz, corresponding to the average power of 590mW.

关 键 词：SEMICONDUCTOR SATURABLE ABSORBERS ND-YLF LASERS ND-GDVO4 LASER YAG LASER MIRROR ND-YVO4 

分 类 号：O51[理学—低温物理]