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作 者:韦伦存[1] 韩建伟[1] 钟运成 于金祥[1] 赵子强[1] 王浩[1]
机构地区:[1]北京大学重离子物理研究所
出 处:《核物理动态》1996年第2期45-46,共2页
基 金:国家自然科学基金;国家教委优秀教师基金
摘 要:对北京大学重离子物理研究所进行的团簇产生设备的研制、团簇的产生及其性质的研究进行描述.利用自行研制的一台气体载带溅射原子经液氮冷凝的团簇产生设备,成功地制备了多种金属及其化合物团簇,发现了支撑Cu团簇的“收缩效应”,最大收缩率为4.7%.研究了加速电压对ICBD薄膜的影响.发现加速电压越高,形成的Cu薄膜越光滑.当加速电压达到18kV时。By using liquid nitrogen cooling of sputtered atoms in flowing gas, a cluster machine has been designed. With the machine, kinds of metal and metalnitride clusters have been successfully generated. Cu cluster's micro structure has been studied. Micrography and electron diffraction of different size Cu clusters show:Cu clusters smaller than 8nm in diameter are amorphous,Cu tu culsters larger than 8nm in diameter are in crystal form. Lattice constant of Cu cluster is 8nm.a function of size, the observed largest lattice shrinking is 4.7% while cluster diameter is The importance of acceleration voltage in ICBD has been studied. SEM observation showed that, as the acceleration voltage increased, the surface of the depostied thin film became more smooth. For Cu Film,when the acceleration voltage is greater that 18kV, it is very difficult for any crudeness by SEM.
分 类 号:TL501[核科学技术—核技术及应用]
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