掺硼金刚石薄膜的电化学性能  

Electrochemical properties of boron-doped diamond thin-film

作　　者：刘峰斌[1] 汪家道[1] 刘兵[1] 李学敏[1] 陈大融[1] 

机构地区：[1]清华大学摩擦学国家重点实验室,北京100084

出　　处：《功能材料与器件学报》2005年第3期295-298,共4页Journal of Functional Materials and Devices

基　　金：上海科委项目(No.0123nm023)

摘　　要：利用循环伏安法,通过对比掺硼金刚石薄膜电极和铂/金刚石电极分别作为工作电极时的循环伏安曲线,分析了两种电极表现出的电化学性能差别,并利用能级理论进行了机理探讨。结果表明掺硼金刚石薄膜电极具有宽的电化学窗口(宽度约为3V)、良好的化学稳定性和极低的背景电流(接近0),是一种较有潜力的电化学电极材料。By cyclic vohammetry, electrochemical properties of the boron-doped diamond thin-film electrode were investigated compared with those of Pt/BDD electrode. It shows that the boron-doped diamond thin-film electrode has wide electrochemical window （approximate 3V）, excellent chemical sta- bility and low background current （near zero ）. At the same time, the result was analyzed with energy level theory. All the works show that the boron-doped diamond thin film is a kind of ideal potential electrode.

关 键 词：掺硼金刚石薄膜电极 铂/金刚石电极 电化学性能 循环伏安法 

分 类 号：O484[理学—固体物理] O646[理学—物理]