含硅一维纳米材料的研究动向  

Research direction of one dimensional nanostructures of silicon and silicon compound

作　　者：高后秀[1] 王炜娜[1] 陈泉水[1] 刘双翼[1] 

机构地区：[1]天津大学材料科学与工程学院,天津300072

出　　处：《兵器材料科学与工程》2005年第5期50-56,共7页Ordnance Material Science and Engineering

基　　金：天津市自然科学基金重点项目(No:003805611)天津市自然科学基金项目(No:033610611)南开大学-天津大学刘徽应用数学中心项目(No:T13)

摘　　要：总结了近几年来国内外硅及含科化合物一维纳米材料研究的最新进展,其中包括Si、SiO2、SiC、Si3N4等一维纳水材料的制备与表征及其适用化的可能性;简述了一种新型的含硅化合物一维纳米结构材料的合成方法。简单介绍了硅及含硅化合物一维纳米结构的应用。The lasted development of one dimensional nanostructures of silicon and silicon compound is summarized, including the preparation of one dimensional nanostructures, characterization and possibility of application. A brief description of synthesis technique of a new type of one dimensional nanostruetures of silicon compound and its application was given. According to current developing trend, the present deficiency of one dimensional nanostructures of silicon and silicon compound was analyzed and the development trend of aftertime was put forward.

关 键 词：硅及含硅化合物 一维纳米材料 制备方法 

分 类 号：O643[理学—物理化学] TB383[理学—化学]