内部硅化法制备低成本C/SiC复合材料  

C/SiC Composites Prepared by Inner Siliconizing Process

作　　者：闫联生[1] 李贺军[1] 崔红[2] 王涛[2] 

机构地区：[1]西北工业大学材料学院,西安710072 [2]西安航天复合材料研究所,西安710025

出　　处：《材料工程》2005年第9期41-44,52,共5页Journal of Materials Engineering

摘　　要：采用内部硅化法制备了低成本C/SiC复合材料,通过三点弯曲法表征了复合材料的强度,采用X射线衍射(XRD)分析了基体组成,通过扫描电镜(SEM)研究了纤维/基体界面和复合材料断裂面的微观结构。结果表明,纤维表面沉积CVD-SiC保护涂层能够有效保护碳纤维不被硅侵蚀,调整硅粉和酚醛树脂配比使C∶Si摩尔比等于10∶9,可消除SiC基体中的残余自由硅。研制的低成本2D C/SiC复合材料的弯曲强度和剪切强度分别达到247MPa与13.6MPa。2D C/SiC复合材料的断裂行为呈现韧性破坏模式,在断裂面存在大量的拔出纤维,复合材料的断裂韧性(KIC)达到12.1MPa.m1/2。C/SiC composites were prepared by inner siliconizing.process. The strength, matrix composition and microstructure of the composites were investigated by three-piont-bending method, XRD and SEM. The results show that CVD-SiC coating can protect the carbon fibers from attack by melting silicon. The SiC matrix without silicon is made when the molar ratio of C to Si is 10 ： 9 by controlling the ratio of phenolic resin and silicon powder. The flexural strength and shear strength of the C/SiC composites are 247MPa and 13.6MPa respectively. The failure module of the C/SiC composites exhibit typical toughness fracture module with many pulled-out fibers in the cross-section of the composite fracture specimens, the fracture toughness（Kic）of the composite is 12.1MPa · m^1/2.

关 键 词：液相渗硅技术 碳/碳化硅复合材料 界面涂层 硅化处理 

分 类 号：TB323[一般工业技术—材料科学与工程]