采用SiC/Si_3N_4陶瓷先驱体连接反应烧结SiC  

Joining of Reaction-Bonded Silicon Carbide Using SiC/Si_3N_4 Preceramic Polymer

作　　者：刘洪丽[1] 李树杰[1] 张听[1] 陈志军 

机构地区：[1]北京航空航天大学,北京100083 [2]陕西华兴航空机轮刹车系统有限责任公司第46研究所,陕西兴平713106

出　　处：《稀有金属材料与工程》2005年第9期1469-1472,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金资助项目(50271003);中国航空基础科学基金资助项目(03H51024)

摘　　要：采用SiC/Si3N4陶瓷先驱体聚硅氮烷连接反应烧结碳化硅陶瓷,研究了连接温度、连接压力、浸渍/裂解增强处理对连接强度的影响。结果表明:在1100℃~1400℃温度范围内,连接强度先升高后降低;连接过程中施加适当的轴向压力可提高连接层致密度;浸渍/裂解增强处理可大幅度提高接头强度。当连接温度为1300℃,连接压力为15kPa,经3次增强处理的连接件抗弯强度达最大值169.1MPa。这种连接件的断口表面粘有大量SiC母材。由XRD研究表明,随着温度的逐步升高,聚硅氮烷的裂解产物发生了由非晶态向晶态的转变。微观结构及成分分析显示:连接层为厚度2μm^3μm的SiCN无定形陶瓷,其结构较为均匀致密;连接层与基体间界面接合良好。Joining between reaction-bonded silicon carbides （RBSiC） has been realized using a SiC/Si3N4 preceramic polymer （polysilazane） as the joining material. The joining strength of the joints is strongly affected by the technological parameters, such as joining temperature, joining pressure and times for reinforcing treatment including infiltration and thermo-decomposition. Samples were joined at the temperatures ranging from 1100℃ to 1400℃. The maximum bending strength of 169.1 MPa was obtained at the joining temperature of 1300℃ for the joints. The densification of joining material can be contributed to proper axial joining pressure. The reinforcing treatment can remarkably increase the joining strength of joints. Micro-structural study and XRD analysis reveals that the joining material has transformed into 1100℃-1300℃, which is transformed a uniform and densified interlayer of amorphous SiCN ceramic with a thickness of 2 μm-3 μm at into SiC and Si3N4 crystals at 1400℃.

关 键 词：陶瓷连接 SiC/Si3N4陶瓷先驱体 聚硅氮烷 反应烧结碳化硅(RBSiC) 

分 类 号：TQ174.6[化学工程—陶瓷工业]