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作 者:杜晓晴[1] 常本康[1] 邹继军[1] 李敏[1]
机构地区:[1]南京理工大学电子工程与光电技术学院,南京210094
出 处:《光学学报》2005年第10期1411-1414,共4页Acta Optica Sinica
基 金:十五国防科技预研重点项目(404050501D)资助课题
摘 要:获得高量子效率且稳定性良好的阴极一直是近年来发展GaAs光电阴极的重要方向。对晶面为(100),掺杂Be,厚度为1μm分子束外延生长的反射式GaAs发射层,设计了一种从体内到表面掺杂浓度由高到低分布的新型梯度掺杂结构。掺杂浓度的范围从1×1019cm-3到1×1018cm-3,并利用(Cs,O)激活技术制备了GaAs光电阴极。光谱响应测试曲线显示,与传统均匀掺杂的GaAs光电阴极相比,梯度掺杂的GaAs光电阴极的量子效率在整个波段都有提高,积分灵敏度可达1580μA/lm,且具有更好的稳定性。讨论了这种新型GaAs光电阴极获得更高量子效率的内在机理。该设计结构是现实可行的,且具有很大发展潜力,它为国内发展高性能GaAs光电阴极提供了一条重要途径。To achieve high quantum efficiency and good stability has been a main direction to develop GaAs photocathode recently. For a molecular beam epitaxy grown, (100) wafer, Be doping and 1 μm thickness reflection-mode GaAs emission layer, a new-type gradient doping structure, in which from GaAs bulk to surface doping concentrations are distributed gradiently from 1 × 10^19 cm^-3 to 1×10^18cm^-3 , was designed. And the new-type GaAs emission layer was prepared into photocathode by (Cs,O) activation technique. The spectral response curves show that compared to common uniform doping GaAs photocathode, the quantum efficiency of gradient doping GaAs photocathode is increased within whole response waveband, with integral sensitivity of 1580 μA/lm, and the photocathode also behaves more stable, which proved that the new-type gradient doping structure is executable and practical, has great potential, and the development of it provides an important approach to development of the national GaAs photocathode with high performance. The inherent reasons why the new-type GaAs photocathode obtained higher quantum efficiency were also discussed.
关 键 词:光电子学 GAAS光电阴极 量子效率 梯度掺杂 激活 光谱响应 积分灵敏度
分 类 号:TN214[电子电信—物理电子学]
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