光寻址电位传感器特性的仿真分析  

Characteristics Simulation Analysis of Light Addressable Potentiometric Sensor

作　　者：门洪[1] 李毅[1] 张钦涛[1] 王平[1] 

机构地区：[1]浙江大学生物医学工程与仪器科学学院

出　　处：《计量学报》2005年第3期279-283,共5页Acta Metrologica Sinica

基　　金：国家"863"高技术项目(2001AA635060);国家自然科学基金(30270387);教育部博士点基金(20010335007)

摘　　要：光寻址电位传感器(LAPS)在生物医学和环境监测领域有着广泛的应用。提出了金属绝缘层硅(MIS)结构LAPS的电路模型,并推导出数学模型。在此基础上,采用电路模拟方法仿真分析了影响LAPS特性的因素:硅掺杂浓度、绝缘层厚度以及光强等,仿真结果正确地反映了LAPS的实际特性。最后,提出了一种优化设计LAPS的新方案。Light Addressable Potentiometric Sensor （LAPS） is widely used in many fields such as biomedicine and gas monitoring. The circuit model of LAPS with Metal/Insulation/Silicon （MIS） structures is proposed and its mathematical model is deduced. The influence factors of LAPS characteristics such as silicon doping content, insulating layer thickness and hght intensity are analyzed by means of circuit simulation method. The simulation results correctly reflect the reality characteristics of LAPS. Finally, a novel scheme of optimum design for LAPS is proposed.

关 键 词：计量学 光寻址电位传感器(LAPS) 仿真分析 金属/绝缘层/硅(MIS)结构 

分 类 号：TB99[一般工业技术—计量学]