非接触式电场测量法中杆塔影响的分析  

Analysis of the Influence of Tower on the Non-touch Electric Field Mapping Method

作　　者：姚德贵[1] 杨帆[2] 何为[2] 李家祥[2] 

机构地区：[1]河南电力试验研究院,郑州450052 [2]重庆大学高电压与电工新技术教育部重点实验室,重庆400044

出　　处：《高电压技术》2005年第9期11-13,33,共4页High Voltage Engineering

摘　　要：根据模拟电荷法(CSM)建立三相高压绝缘子与杆塔的等效模型,在每相绝缘子串附近一定距离设置几个测量点(110kV,每相3个点),根据杆塔塔架对测量点影响的大小简化杆塔结构。采用PMM8053_EHP50B型工频电磁场测量探头测量各测量点的电场强度,逆向应用CSM并结合遍历的搜索方法搜索计算各相绝缘子片的实际电位分布值。将其与绝缘子串正常电位分布值比较,可判断是否存在劣质绝缘子及其位置。该法的优点是可实现一定距离的非接触式测量,对110kV三相猫头型铁塔系统,测量最大距离可达2.5m。According to the charge simulation method and the induced charges on the surface of the insulators and the tower, an equivalent model of the insulators and the tower can be set up. Several measuring points are set up near the insulators of each phase, for the system of three-phase 110 kV three points is enough, then the electric field produced by the induced charges of the tower, is computed and the influence to the electric field of the measuring points produced by the induced charges of the tower is analyzed, finally the tower is simplified. By measuring the electric field of a few points near the insulators. The practical distribution of the voltage on the surface of the insulators can be got using the simulation charge method and searching all one by one. Moreover the practical distribution of voltage on insulators and defective insulators can be estimated by comparing it with the standard distribution of the voltage on the insulators.

关 键 词：模拟电荷法 劣质绝缘子 杆塔 影响 电位分布 

分 类 号：TM835[电气工程—高电压与绝缘技术]