Bi_2O_3和V_2O_5复合掺杂BaTi_4O_9微波介质陶瓷  

Study on the BaTi_4O_9 Microwave Dielectric Ceramic Doped with Bi_2O_3 and V_2O_5

作　　者：凌栋[1] 徐国跃[1] 蔡绍[2] 

机构地区：[1]南京航空航天大学材料科学与技术学院,江苏南京210016 [2]重庆科技学院电子信息工程学院,重庆400042

出　　处：《电子元件与材料》2005年第10期11-13,共3页Electronic Components And Materials

基　　金：国防基础科研资助项目(J1300A002)

摘　　要：研究了多元掺杂对BaTi4O9微波介质陶瓷的烧结和介电性能的影响。通过单独添加烧结助剂Bi2O3和V2O5以及复合添加Bi2O3、V2O5来降低烧结温度,并且保持较好的微波介电性能。实验结果表明,当复合添加Bi2O3和V2O5各0.5%(质量分数)烧结温度为1160℃时,BaTi4O9微波介质陶瓷在2.5GHz下:εr为40.1,tgδ为6×10–4,τf为64×10–6℃–1,保持了良好的介电性能。The sintering and dielectric properties of BaTi4O9 microwave dielectric ceramic by multi-doping were investigated. The porpose of lowing the sintering temperature was achieved by Bi2O3 and V2O5 single-doping and mulit-doping of the two dopants. It also retain preferable microwae property and high frequency dielectric property. The experiment result shows that by multi-doping of Bi203 and V2O5 each for 0.5%（mass fraction）, and sintered at 1 160℃, BaTi4O9 microwave dielectric ceramic has a favorable dielectric property at 2.5 GHz： εt= 40.1, tgδ = 6×10^-4, τf= 64× 10^-6℃^-1.

关 键 词：电子技术 BaTi4O9 微波介质陶瓷 低温烧结 

分 类 号：TN304[电子电信—物理电子学]