深振幅Al调制靶的化学腐蚀制备工艺研究  

Aluminium target with deep amplitude modulation fabricated by chemical wet etching process

作　　者：孙骐[1] 周斌[1] 杨帆[1] 沈军[1] 吴广明[1] 

机构地区：[1]同济大学波耳固体物理研究所,上海200092

出　　处：《强激光与粒子束》2005年第9期1382-1386,共5页High Power Laser and Particle Beams

基　　金：国家863计划项目资助课题;同济大学理科发展基金资助课题(1370219047)

摘　　要：介绍了用于惯性约束聚变分解实验的铝调制靶的制备。以半导体光刻工艺结合化学腐蚀工艺在铝箔表面引入周期为50μm的条槽图形,研究腐蚀条件对腐蚀速率的影响;采用光学显微镜、扫描电镜和台阶仪对图形形貌和样品表面成分进行测量和分析,获得厚度在32μm左右、腐蚀深度达到20μm的铝调制靶。The aluminium modulation target used to study the Rayleigh-Taylor instability in the resolved experiments of Inertial Confined Fusion （ICF） was fabricated. Based on semiconductor photolithography technology and chemical wet etching process, the stripe pattern of line width 25 μm on aluminium foil surface was obtained. The effects of the reaction conditions on the etching rate were studied. The pattern topography and the surface constituent were measured and analyzed. Aluminium modulation targets of about 32 μm thick were prepared and the etching depth reached up to 20 μm.

关 键 词：惯性约束聚变 铝调制靶 化学腐蚀 

分 类 号：O484.5[理学—固体物理]