一种曲率补偿CMOS带隙基准源(英文)  

A Curvature-Compensated CMOS Bandgap Reference

作　　者：王帅旗[1] 李福乐[2] 王志华[2] 张天义[1] 

机构地区：[1]北京大学微电子系,北京100871 [2]清华大学微电子研究所,北京100084

出　　处：《微电子学》2005年第5期531-533,共3页Microelectronics

基　　金：Project supported by the National Natural Science Foundation of China(60475018)

摘　　要：介绍了一种可提供1.438 V基准电压的曲率补偿带隙基准源.采用一种极其简单有效的方法,直接实现曲率补偿.该电路采用双金属双多晶硅0.6 μm CMOS工艺制造,用于驱动一个10位20 MS/s A/D转换器.仿真结果显示,该带隙基准源在室温5 V电源电压下,仅耗用64 μA电流;0～80°C范围内,温度系数为13.7 ppm/K, 电源电压抑制比为64.7 dB.A curvature-compensated bandgap reference is presented, which is capable of generating a simulated reference voltage of 1. 438 V. Simulation result shows that it consumes 64 μA static current with a supply voltage of 5 V at room temperature. An ultimate simple but effective technique is used in this bandgap architecture to straightforwardly implement the curvature compensation. The device achieves 13.7 ppm/K of simulated temperature coefficient in the temperature range from 0 ℃ to 80 ℃ and 64.7 dB of simulated power supply rejection ratio. Developed for a 10-bit 20-MS/s temperature-stable ADC, the bandgap is implemented in a double-metal double-polysilicon 0. 6-μm CMOS technology.

关 键 词：CMOS 带隙基准源 曲率补偿 低功耗 

分 类 号：TN432[电子电信—微电子学与固体电子学]