PSN-PZN-PMS-PZT五元系压电陶瓷性能的研究  

Study on Properties of PSN-PZN-PMS-PZT Piezoelectric Ceramics

作　　者：陆翠敏[1] 孙清池[1] 徐明霞[1] 胜鹏[1] 

机构地区：[1]天津大学材料科学与工程学院,天津300072

出　　处：《压电与声光》2005年第5期510-513,共4页Piezoelectrics & Acoustooptics

基　　金：天津大学先进陶瓷及加工技术教育部重点实验室资助项目(x06050)

摘　　要：采用二次合成工艺得到了PSN-PZN-PM S-PZT五元系压电陶瓷。实验数据表明:组成在准同型相界处压电陶瓷的综合性能达最佳。在此基础上,分析组成在准同型相界处压电陶瓷的烧结温度与体密度、气孔率、晶粒大小及介电、压电性能的关系。结果表明,在合成温度为860°C时可得到钙钛矿结构。烧结温度1 260°C保温3 h条件下,得到一种综合性能优良的压电材料。主要参数为:3Tε3/0ε=1390,tanδ=0.32%,d33=303 pC/N,kp=55.1%,Qm=1 180。定量S r2+、B a2+的加入使相界向富锆方向移动,性能参数为,3Tε3/0ε=1 162,tanδ=0.30%,d33=307 pC/N,kp=56.8%,Qm=1 230。Quinary system piezoelectric ceramics PSN-PZN-PMS-PZT were prepared by using two-step method. Study of the experimental data indicated that the quaternary system exhibited a well-situated property at morphotropic phase boundary （MPB）. The effects of sintering temperature on density, porosity, grain sizes, piezoelectric and dielectric properties of the system have been investigated. The results showed that pure perovskitic structure was obtained at calcination of 860℃ temperatures. Measurements on polarized products indicate that materials with excellent integrated properties were developed, and The optimized results of ε33^T/ε0=1390,tanδ=0.32%, d33（303 pC/N）, kp（55.1%） and Qm（1 180） were obtained without Sr^2＋, Ba^2＋substitution for Pb^2＋, and ε33^T/ε0=1162,tanδ=0.32% ,d33 （307 pC/N）, kp （56.8%） and Qm（1 230） were obtained with quantitative Sr^2＋, Ba^2＋ substitution for Pb^2＋ at sintering of 1 260 ℃ temperatures for 3 h.

关 键 词：五元系 二次合成 准同型相界 烧结温度 

分 类 号：TM282[一般工业技术—材料科学与工程]