再结晶技术对压电石英晶体质量的影响  

Study on the Growth of High Quality Quartz Crystal through Tricrystallization

作　　者：翟剑庞[1] 杜伟[1] 仪修杰[1] 杨长红[1] 姜付义[1] 杨冬梅[1] 韩建儒[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,山东济南250100

出　　处：《压电与声光》2005年第5期521-522,531,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(50172031和60278036)

摘　　要：压电石英元器件正向高频、小型化、片式化等方向发展,对石英晶体材料的品质提出了更高的要求。该文根据再结晶原理,利用水热法对压电石英晶体进行了一、二和三次结晶,分别测量了三次结晶引起的Q值、包裹体和腐蚀隧道变化,分析和讨论了籽晶、杂质和工艺条件对晶体质量的影响。报道了生长这种高质量压电石英晶体的主要条件。Development of a smaller size and high frequency devices needs some quartz crystal with high quality. The characteristics of these crystal are analysed. The high quality crystals have been synthesized by using hydrothermal method through tricrystallization. The technology and technical conditions of crystal growth are reported, the properties and qualities of the crystals are measured and the relations between crystalline qualities and growing conditions are discussed.

关 键 词：石英晶体 再结晶 高质量 

分 类 号：O782[理学—晶体学]